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absolute maximum ratings parameter units i d @ v gs = 4.5v, t c = 25c continuous drain current 20* i d @ v gs = 4.5v, t c =100c continuous drain current 20* i dm pulsed drain current 80 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 10 v e as single pulse avalanche energy 98 mj i ar avalanche current 20 a e ar repetitive avalanche energy 7.5 mj dv/dt peak diode recovery dv/dt 6.9 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in/1.6mm from case for 10s) weight 4.3 (typical) g c a www.irf.com 1 60v, n-channel technology product summary part number radiation level r ds(on) i d irhlys77034cm 100k rads (si) 0.045 ? 20a* irhlys73034cm 300k rads (si) 0.045 ? 20a* for footnotes refer to the last page pre-irradiation radiation hardened irhlys77034cm logic level power mosfet thru-hole (low-ohmic to-257aa) features: 5v cmos and ttl compatible fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed light weight complimentary p-channel available - irhlys797034cm international rectifier?s r7 tm logic level power mosfets provide simple solution to interfacing cmos and ttl control circuits to power devices in space and other radiation environments. the threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. this is achieved while maintaining single event gate rupture and single event burnout immunity. these devices are used in applications such as current boost low signal source in pwm, voltage comparator and operational amplifiers. 2n7607t3 low-ohmic to-257aa * current is limited by package pd-97291 preliminary
irhlys77034cm, 2n7607t3 pre-irradiation 2 www.irf.com preliminary source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 20* i sm pulse source current (body diode) ?? 80 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 20a, v gs = 0v t rr reverse recovery time ? ? 200 ns t j = 25c, i f = 20a, di/dt 100a/ s q rr reverse recovery charge ? ? 705 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page note: corresponding spice and saber models are available on international rectifier web site. electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 60 ? ? v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown ? 0.07 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.045 ? v gs = 4.5v, i d = 20 resistance v gs(th) gate threshold voltage 1.0 ? 2.0 v v ds = v gs , i d = 250 a ? v gs(th) / ? t j gate threshold voltage coefficient ? -5.0 ? mv/c g fs forward transconductance 19 ? ? s v ds = 10v, i ds = 20a i dss zero gate voltage drain current ? ? 1.0 v ds = 48v ,v gs = 0v ??10 v ds = 48v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 10v i gss gate-to-source leakage reverse ? ? -100 v gs = -10v q g total gate charge ? ? 34 v gs = 4.5v, i d = 20a q gs gate-to-source charge ? ? 8.0 nc v ds = 30v q gd gate-to-drain (?miller?) charge ? ? 13 t d (on) turn-on delay time ? ? 30 v dd = 30v, i d = 20a, t r rise time ? ? 7.0 v gs = 5.0v, r g = 7.5 ? t d (off) turn-off delay time ? ? 60 t f fall time ? ? 20 l s + l d total inductance ? 6.8 ? ciss input capacitance ? 2025 ? v gs = 0v, v ds = 25v c oss output capacitance ? 484 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 5.1 ? na nh ns a measured from drain lead ( 6mm / 0.025 in from package ) to source lead ( 6mm/ 0.025 in from package ) r g gate resistance 1.16 ? f = 1.0mhz, open drain thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 1.67 r thja junction-to-ambient ? ? 80

c/w * current is limited by package
www.irf.com 3 pre-irradiation irhlys77034cm, 2n7607t3 preliminary international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page fig a. typical single event effect, safe operating area table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 300k rads (si) 1 units test conditions min max bv dss drain-to-source breakdown voltage 60 ? v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 1.0 2.0 v gs = v ds , i d = 250a i gss gate-to-source leakage forward ? 100 na v gs = 10v i gss gate-to-source leakage reverse ? -100 v gs = -10v i dss zero gate voltage drain current ? 10 a v ds = 48v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-3) ? 0.045 ? v gs = 4.5v, i d = 20a r ds(on) static drain-to-source on-state v sd diode forward voltage ? 1.2 v v gs = 0v, i d = 20a resistance (low ohmic to-257) ? 0.045 ? v gs = 4.5v, i d = 20a 1. part numbers irhlys77034, irhlys73034 0 10 20 30 40 50 60 70 -7 -6 -5 -4 -3 -2 -1 0 vgs vds kr xe au t a bl e 2 . t yp i ca l si n gl e e vent eff ect s a f e o perat i n g a rea ion let energy range vds (v) (mev/(mg/cm 2 )) (mev) (m) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v -1v -2v -3v -4v -5v -6v -7v kr 37.3 400 48.6 60 60 60 60 60 60 60 35 xe 63.3 435 38.4 60 60 60 60 60 - - - au 90 1480 80.4 60 - - - - - - -
irhlys77034cm, 2n7607t3 pre-irradiation 4 www.irf.com preliminary fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 2 2.5 3 3.5 4 4.5 5 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 25v 6 0 s pulse width t j = 150c t j = 25c 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.0v 2.50v bottom 2.25v 2.25v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.25v vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.0v 2.50v bottom 2.25v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 4.5v i d = 20a
www.irf.com 5 pre-irradiation irhlys77034cm, 2n7607t3 preliminary fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current fig 7. typical drain-to-source breakdown voltage vs temperature fig 8. typical threshold voltage vs temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 60 70 80 90 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = 1.0ma -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 150ma 0 10 20 30 40 50 60 70 80 i d , drain current (a) 10 20 30 40 50 60 70 80 90 100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 150c vgs = 4.5v 2 4 6 8 10 12 v gs, gate -to -source voltage (v) 0 10 20 30 40 50 60 70 80 90 100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 20a t j = 25c t j = 150c
irhlys77034cm, 2n7607t3 pre-irradiation 6 www.irf.com preliminary fig 12. maximum drain current vs. case temperature fig 10. typical gate charge vs. gate-to-source voltage fig 9. typical capacitance vs. drain-to-source voltage fig 11. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 0 400 800 1200 1600 2000 2400 2800 3200 3600 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.01 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c 25 50 75 100 125 150 t c , case temperature (c) 0 5 10 15 20 25 30 35 i d , d r a i n c u r r e n t ( a ) limited by package 0 5 10 15 20 25 30 35 40 45 50 55 60 q g, total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v v ds = 12v i d = 20a for test circuit see figure 17
www.irf.com 7 pre-irradiation irhlys77034cm, 2n7607t3 preliminary fig 15. maximum effective transient thermal impedance, junction-to-case fig 13. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 180 200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 8.9a 12.6a bottom 20a 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100s
irhlys77034cm, 2n7607t3 pre-irradiation 8 www.irf.com preliminary q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17b. gate charge test circuit fig 17a. basic gate charge waveform v ds 90% 10% v gs t d(on) t r t d(off) t f fig 16a. unclamped inductive test circuit fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 18a. switching time test circuit fig 18b. switching time waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
1

0.1 % + -
www.irf.com 9 pre-irradiation irhlys77034cm, 2n7607t3 preliminary pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 10 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l = 0.49 mh peak i l = 20a, v gs = 10v i sd 20a, di/dt 347a/ s, v dd 60v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 03/2011 case outline and dimensions ? low ohmic to-257aa 3.05 [.120] 0.13 [.005] 0.71 [.028] max . b 5.08 [.200] 4.83 [.190] 10.92 [.430] 10.42 [.410] 1.14 [.045] 0.89 [.035] 16.89 [.665] 16.39 [.645] 3 2 1 15.88 [.625] 12.70 [.500] 0.88 [.035] 0.64 [.025] ? 0.50 [.020] c a b 2x 3x ? 2.54 [.100] c 10.66 [.420] 10.42 [.410] a 13.63 [.537] 13.39 [.527] 3x ? 3.81 [.150] 3.56 [.140] not es : 1. dimens ioning & t olerancing per ans i y14.5m-1994. 2. cont roll ing dimens ion: inch. 3. dimens ions are s hown in mill imet ers [inches ]. 4. outline conforms to jedec outline to-257aa. optional pin-out ceramic eyelets standard pin-out pin assignments 2 = source 1 = drain 3 = gate beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. caution

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